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IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A

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    Buy cheap IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A from wholesalers
     
    Buy cheap IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A from wholesalers
    • Buy cheap IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A from wholesalers
    • Buy cheap IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A from wholesalers
    • Buy cheap IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A from wholesalers

    IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A

    Ask Lasest Price
    Brand Name : Infineon Technologies
    Model Number : SPW35N60C3
    Price : Negotiable
    Payment Terms : T/T, D/P, D/A, L/C, Western Union, MoneyGram
    Supply Ability : Available Quantity 30000 Pieces
    Delivery Time : Negotiable
    • Product Details
    • Company Profile

    IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A

    Product Range
    • IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3

    App Characteristics

    • New revolutionary high voltage technology
    • Ultra low gate charge
    • Periodic avalanche rated
    • Extreme dv /dt rated
    • Ultra low effective capacitances
    • Improved transconductance
    Basic Data
    Product AttributeAttribute Value
    Infineon
    Product Category:MOSFET
    RoHS:Details
    Si
    Through Hole
    TO-247-3
    N-Channel
    1 Channel
    600 V
    34.6 A
    100 mOhms
    - 20 V, + 20 V
    2.1 V
    150 nC
    - 55 C
    + 150 C
    313 W
    Enhancement
    CoolMOS
    Tube
    Brand:Infineon Technologies
    Configuration:Single
    Fall Time:10 ns
    Forward Transconductance - Min:36 S
    Height:21.1 mm
    Length:16.13 mm
    Product Type:MOSFET
    Rise Time:5 ns
    Series:CoolMOS C3
    240
    Subcategory:MOSFETs
    Transistor Type:1 N-Channel
    Typical Turn-Off Delay Time:70 ns
    Typical Turn-On Delay Time:10 ns
    Width:5.21 mm
    Part # Aliases:SPW35N6C3XK SP000014970 SPW35N60C3FKSA1
    Unit Weight:0.211644 oz
    DOWNLOAD DATASHEET
    • IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3
    Application
    • Widely used in stage, concert, network communication,Smartphones Tablets Laptops Notebooks Power Adapters Cameras Dongle
    Order Process

    Add Parts to RFQ formSubmit RFQWe reply within 24 hours
    You confirm orderPaymentShip out your order
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    Chip Diagram

    IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6AIGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A

    Quality IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A for sale
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